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Jurca, Titel ; Moody, Michael J. ; Henning, Alex ; Emery, Jonathan D. ; Wang, Binghao ; Tan, Jeffrey M. ; Lohr, Tracy L. ; Lauhon, Lincoln J. ; Marks, Tobin J. ( , Angewandte Chemie International Edition)
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Jurca, Titel ; Moody, Michael J. ; Henning, Alex ; Emery, Jonathan D. ; Wang, Binghao ; Tan, Jeffrey M. ; Lohr, Tracy L. ; Lauhon, Lincoln J. ; Marks, Tobin J. ( , Angewandte Chemie)
Abstract Wet chemical screening reveals the very high reactivity of Mo(NMe2)4with H2S for the low‐temperature synthesis of MoS2. This observation motivated an investigation of Mo(NMe2)4as a volatile precursor for the atomic layer deposition (ALD) of MoS2thin films. Herein we report that Mo(NMe2)4enables MoS2film growth at record low temperatures—as low as 60 °C. The as‐deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift‐off patterning for the straightforward fabrication of diverse device structures.
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Emery, Jonathan D. ; Wheeler, Virginia D. ; Johns, James E. ; McBriarty, Martin E. ; Detlefs, Blanka ; Hersam, Mark C. ; Kurt Gaskill, D. ; Bedzyk, Michael J. ( , Applied Physics Letters)